RESISTIVITY AND MOBILITY

RESISTIVITY AND MOBILITY

IMPURITY CONCENTRATION (/cm3)

RESISTIVITY AND MOBILITY

RESISTIVITY (n-cm)

IMPURITY CONCENTRATION (/cm3)

FIGURE D4 1

Resistivity of (a) Si and (b) Ge and GaAs as a function of doping concentration (After Refs I and 2)

RESISTIVITY AND MOBILITY

03

O

S

Подпись: 03 O S

10“

Подпись: 10“

Ј

Подпись: Ј(a)

RESISTIVITY AND MOBILITY

101:

Подпись: 101:

1017

Подпись: 1017

10”

Подпись: 10”

(b)

Подпись: (b)Ј

fc

8

s

RESISTIVITY AND MOBILITY

ОO’“1

Подпись: ОO'“1

I015 10’6 1017 1015

IMPURITY CONCENTRATION (/cm3)

Подпись:Ј

(c)

Подпись: (c)Ta

8

10′-

Подпись: 10'-s

FIGURE D4.2

Carrier mobility as a function of impurity concentration for (a) Si, (b) Ge, and (c) GaAs at room temperature (After Ref 2)

REFERENCES

1 J C Irvin, ‘ Resistivity of bulk, silicon and of diffused layers m silicon,” Bell Syst Tech J, 41, 387 (1962)

2 S M SzeandJ C Irvin, “Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K,” Solid-State Electron „ 11, 599 (1968)

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