INTRINSIC CONCENTRATIONS AND FERMI LEVELS


INTRINSIC CONCENTRATIONS AND FERMI LEVELS

INTRINSIC CONCENTRATION n, (cm"3)

Подпись: INTRINSIC CONCENTRATION n, (cm"3)1019 10‘8 1017 1016 1015 10H 1013 10’2 10"

10’°

I o’

10»

107 106

TEMPERATURE“1 (1000 K)“1 FIGURE D5.1

Temperature dependence of n. for Si, Ge, GaAs, and GaP (After Ref 1)

(a)

100 200 300 400 500 600 700 800 900 1000 TEMPERATURE (K.)

Подпись: INTRINSIC CONCENTRATIONS AND FERMI LEVELS

200 300 400 500

TEMPERATURE (K)

Подпись: 200 300 400 500 TEMPERATURE (K) INTRINSIC CONCENTRATIONS AND FERMI LEVELS(b)

INTRINSIC CONCENTRATIONS AND FERMI LEVELS(c)

FIGURE D5.2

Fermi-level a function of doping and temperature for (a) Si (After Ref 2), (b) Ge (After Ref 3), and (c) GaAs (After Ref 4)

REFERENCES

1 C T Sail, Fundamentals of solid-state electronics, World Scientific, Singapore, 1991

2 W E Beadle, J C C Tsai and R D Plummer, Eds, Quick reference manual for silicon integrated circuit technology, Wiley, New York, 1985

3 A K Jonscher, Principles of semiconductor device operation Wiley, New York, 1960

4 A G Milnes, Semiconductor devices and integrated electronics, Van Nostrand, New York, 1980

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